Electronics Engineering MCQ
Most Important Electronics Engineering MCQ question with anwer key 1st year Aktu examination Also download the pdf text
Q1. A semiconductor is formed by..........bonds.
a) Covalent
b) Electrovalent
c) Co-ordinate
d) None of the above
Q2. A semiconductor has temperature coefficient of resistance.
a) Positive
b) Zero
c) Negative
d) None of the above
Q3. The most commonly used semiconductor is...........
a) Germanium
b) Silicon
c) Carbon
d) Sulphur
Q4. A semiconductor has generally................valence electrons.
a) 2
b) 3
c) 6
d) 4
Q5. The resistivity of pure germanium under standard conditions is about............
a) 6 x 104 cm
b) 60 cm
c) 3x 106 cm
d) 6 x 10-40 cm
Q6. The resistivity of a pure silicon is about.................
a) 100 cm
b) 6000 cm
c) 3 x 105 m
d) 6x 10-80 cm
Q7. When a pure semiconductor is heated, its resistance
a) Goes up
b) Goes down
c) Remains the same
d) Can't say
Q8. The strength of a semiconductor crystal comes from.........
a) Forces between nuclei
b) Forces between protons
c) Electron-pair bonds
d) None of the above
Q9. When a pentavalent impurity is added to a pure semiconductor, it becomes........
a) An insulator
b) An intrinsic semiconductor
c) p-type semiconductor
d) n-type semiconductor
Q10. Addition of pentavalent impurity to a semiconductor creates many..........
a) Free electrons
b) Holes
c) Valence electrons
d) Bound electrons
Q11. A pentavalent impurity has.............Valence electrons
a) 3
b) 5
c) 6
d) 3
Q12. An n-type semiconductor is.......
a) Positively charged.
b) Negatively charged
c) Electrically neutral
d) None of the above
Q13. A trivalent impurity has..... valence electrons
a) 4
b) 5
c) 4
d) 6
Q14. Addition of trivalent impurity to a semiconductor creates many
a) Holes
b) Free electrons
c) A free proton
d) A free neutron
Q15. A hole in a semiconductor is defined as................ as
a) A free electron
b) The incomplete part of an electron pair bond
c) Valence electrons
d) Bound electrons
Q16. The impurity level in an extrinsic semiconductor is about..... of pure semiconductor.
a) 10 atoms for 108 atoms ,
b) 1 atom for 108 atoms
c) 1 atom for 104 atoms
d) 1 atom for 100 atoms
Q17. As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor
a) Remains the same
b) Increases
c) Decreases
d) None of the above
Q18. A hole and electron in close proximity would tend to...........
a) Repel each other
b) Attract each other
c) Have no effect on each other
d) None of the above
Q19. In a semiconductor, current conduction is due to.........
a) Only holes.
b) Only free electrons.
c) Holes and free electrons
d) None of the above
Q20. The random motion of holes and free electrons due to thermal agitation is called.........
a) Diffusion
b) Pressure
c) Operational amplitude
d) None of the above
Q21. Op-Amp is abbreviated as
a) Operational Amplifier
b) Operand amplitude
c) lonisation
d) None of the above
Q22.Op-Amp is a...........type of amplifier.
a) Current
b) Voltage
c) Power
d) Resistance
Q23.Op-Amp is.........coupled voltage type of amplifier.
a) AC
b) DC
c) ADC
d) DAC
Q24.Op-Amp has....gain
a) High
b) Low
c) Zero
d) Medium
Q25. A device with direct current coupled, high gain electronic voltage type amplifier with one output and differential input is called
a) Rectifier
b) Amplifier
c) Transformer
d) Op-amp
Q26. Op-Amp has.......inputs
a) Single
b) Similar
c) Zero
d) Differential
Q27.Op-Amp has.........outputs.
a) Single
b) Similar
c) Multiple
d) Differential
Q28.The potential output of Op-Amp is times greater than the potential difference of input.
a) 100 times.
b) 10000 times
c) 100,000 times
d) 10000000 times
Q29. Op-Amp is originated from.............computers.
a) Analog
b) Digital
c) Both a and b
d) None of the above.
Q30. Op-Amp performs..........operations
a) Arithmetic
b) Logical
c) Alphanumeric
d) Both a and b
Q.31 Mechanism at which diode break is known
a. breakdown mechanism
b. reverse voltage
C. forward voltage
d. none of above
Q.32 Diode resistance are how many type
a. 2
b. 4
c.3
d. 5
Q.33 Component that convert ac into de
a capacitor
B. resistance
c. inductor
d. rectifier
Q.34 Diode capacitance are how many type
a. 2
B.4
c.1
d. 3
Q35) Full wave rectifier convert
a. only one half cycle
b. remain constant
c. both half cycle
d. none of the above
Q.36) In C filter C stands for
a. capacitor
b. diode
c. inductor
d. resistance
Q.37) Clipping circuit is also known as
a. wave shaping circuit
B. semiconductor
C. energy band
d. p type
Q38) Circuit that shift de level of ac signal
a. clamping circuit
B.clipping circuit
C. rectifier
d. diade
Q39) TUF means
a. Transformer utilization factor
B. resistance utilization factor
C. diode factor
d. none of above
0.39) Purity of dc output obtain at rectifier is measured by factor
a average voltage
b. ripple factor
C. inverse voltage
d. none of above
Q40) Maximum value obtain at the complete cycle
a. peak value
B. null value
C. high value
d. low value
041) Voltages at which diode can withstand without breaking
a forward voltage
b. reverse voltage
c. peak inverse voltage
d. breakdown voltage
Q42) How many types of breakdown are there
a 1
b. 2
c.3
d.4
Q43) Voltage at which zener diode break
a. forward voltage
b. reverse voltage
Q44) Breakdown of diode occur in
a.forward bias
b. reverse bais
c. depletion region
d. do not occur
Q44) BJT means
a. bipolar transistor
b. junction transistor
c. bipolar junction transistor
d. none of above.
Q45) How many type of transistor are there
a. 3
b. 2
C.4
D.5
Q.46) in transistor terminal E stand for
a. emitter
b. base
c. enlarge
d. Euclid
Q.47) How many type of configuration are there in transistor
a. 2
b. 3
C.4
Q48) Alpha is ratio of
a. collector to emitter current
b. emitter to collector current
c. emitter to base current
D. base to emitter current
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